Memory management method, memory storage apparatus and memory control circuit unit
A memory management method, a memory storage apparatus and a memory control circuit unit are disclosed. The method includes: sending a plurality of read command sequences including a first read command sequence and a second read command sequence, and the first read command sequence is configured to instruct a performing of a first read operation on a first physical unit of a rewritable non-volatile memory module, and the second read command sequence is configured to instruct a performing of a second read operation on the first physical unit; determining a system parameter according to a time interval between a first read time point corresponding to the first read operation and a second read time point corresponding to the second read operation; and instructing the rewritable non-volatile memory module to perform a specific operation according to the system parameter.
1. A memory management method, which is adaptable for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, and the memory management method comprising:
sending a plurality of read command sequences comprising a first read command sequence and a second read command sequence, wherein the first read command sequence is configured to instruct a performing of a first read operation on a first physical unit of the plurality of physical units, and the second read command sequence is configured to instruct a performing of a second read operation on the first physical unit;
determining a system parameter according to a time interval between a first read time point corresponding to the first read operation and a second read time point corresponding to the second read operation; and
instructing the rewritable non-volatile memory module to perform a specific operation according to the system parameter.
2. The memory management method according to claim 1 , wherein the step of determining the system parameter according to the time interval between the first read time point corresponding to the first read operation and the second read time point corresponding to the second read operation comprises:
updating statistical information based on the time interval, wherein the statistical information reflects an average of a plurality of historical time intervals; and
determining the system parameter based on the statistical information.
3. The memory management method according to claim 2 , wherein the step of determining the system parameter based on the statistical information comprises:
adjusting a parameter value of the system parameter according to a change of the statistical information.
4. The memory management method according claim 1 , wherein the system parameter comprises at least one of a first system parameter and a second system parameter,
the first system parameter is configured to trigger a data scanning operation on the rewritable non-volatile memory module to detect errors in the first physical unit, and
the second system parameter is configured to trigger a data refreshing operation on the rewritable non-volatile memory module to move data from the first physical unit.
5. The memory management method according to claim 1 , wherein the step of instructing the rewritable non-volatile memory module to perform the specific operation according to the system parameter comprises:
obtaining a deterioration evaluation parameter related to the rewritable non-volatile memory module, wherein the deterioration evaluation parameter comprises a read count, and the read count reflects the number of times the first physical unit is read;
comparing the deterioration evaluation parameter to the system parameter; and
instructing the rewritable non-volatile memory module to perform the specific operation according to a comparison result.
6. The memory management method according to claim 1 , wherein the system parameter comprises a third system parameter, and the third system parameter is configured to affect a decoding mode used by a decoding circuit.
7. A memory storage apparatus, comprising:
a connection interface unit coupled to a host system;
a rewritable non-volatile memory module comprising a plurality of physical units; and
a memory control circuit unit coupled to the connection interface unit and the rewritable non-volatile memory module,
wherein the memory control circuit unit is configured to:
send a plurality of read command sequences comprising a first read command sequence and a second read command sequence, wherein the first read command sequence is configured to instruct a performing of a first read operation on a first physical unit of the plurality of physical units, and the second read command sequence is configured to instruct a performing of a second read operation on the first physical unit;
determine a system parameter according to a time interval between a first read time point corresponding to the first read operation and a second read time point corresponding to the second read operation; and
instruct the rewritable non-volatile memory module to perform a specific operation according to the system parameter.
8. The memory storage apparatus according to claim 7 , wherein the step of determining the system parameter according to the time interval between the first read time point corresponding to the first read operation and the second read time point corresponding to the second read operation comprises:
updating statistical information based on the time interval, wherein the statistical information reflects an average of a plurality of historical time intervals; and
determining the system parameter based on the statistical information.
9. The memory storage apparatus according to claim 8 , wherein the step of determining the system parameter based on the statistical information comprises:
adjusting a parameter value of the system parameter according to a change of the statistical information.
10. The memory storage apparatus according to claim 7 , wherein the system parameter comprises at least one of a first system parameter and a second system parameter,
the first system parameter is configured to trigger a data scanning operation on the rewritable non-volatile memory module to detect errors in the first physical unit, and
the second system parameter is configured to trigger a data refreshing operation on the rewritable non-volatile memory module to move data from the first physical unit.
11. The memory storage apparatus according to claim 7 , wherein the step of instructing the rewritable non-volatile memory module to perform the specific operation according to the system parameter comprises:
obtaining a deterioration evaluation parameter related to the rewritable non-volatile memory module, wherein the deterioration evaluation parameter comprises a read count, and the read count reflects the number of times the first physical unit is read;
comparing the deterioration evaluation parameter to the system parameter; and
instructing the rewritable non-volatile memory module to perform the specific operation according to a comparison result.
12. The memory storage apparatus according to claim 7 , wherein the system parameter comprises a third system parameter, and the third system parameter is configured to affect a decoding mode used by a decoding circuit.
13. A memory control circuit unit for controlling a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, and the memory control circuit unit comprising:
a host interface coupled to a host system;
a memory interface coupled to the rewritable non-volatile memory module; and
a memory management circuit coupled to the host interface and the memory interface,
wherein the memory management circuit is configured to:
send a plurality of read command sequences comprising a first read command sequence and a second read command sequence, wherein the first read command sequence is configured to instruct a performing of a first read operation on a first physical unit of the plurality of physical units, and the second read command sequence is configured to instruct a performing of a second read operation on the first physical unit;
determine a system parameter according to a time interval between a first read time point corresponding to the first read operation and a second read time point corresponding to the second read operation; and
instruct the rewritable non-volatile memory module to perform a specific operation according to the system parameter.
14. The memory control circuit unit according to claim 13 , wherein the step of determining the system parameter according to the time interval between the first read time point corresponding to the first read operation and the second read time point corresponding to the second read operation comprises:
updating statistical information based on the time interval, wherein the statistical information reflects an average of a plurality of historical time intervals; and
determining the system parameter based on the statistical information.
15. The memory control circuit unit according to claim 14 , wherein the step of determining the system parameter based on the statistical information comprises:
adjusting a parameter value of the system parameter according to a change of the statistical information.
16. The memory control circuit unit according to claim 13 , wherein the system parameter comprises at least one of a first system parameter and a second system parameter,
the first system parameter is configured to trigger a data scanning operation on the rewritable non-volatile memory module to detect errors in the first physical unit, and
the second system parameter is configured to trigger a data refreshing operation on the rewritable non-volatile memory module to move data from the first physical unit.
17. The memory control circuit unit according to claim 13 , wherein the step of instructing the rewritable non-volatile memory module to perform the specific operation according to the system parameter comprises:
obtaining a deterioration evaluation parameter related to the rewritable non-volatile memory module, wherein the deterioration evaluation parameter comprises a read count, and the read count reflects the number of times the first physical unit is read;
comparing the deterioration evaluation parameter to the system parameter; and
instructing the rewritable non-volatile memory module to perform the specific operation according to a comparison result.
18. The memory control circuit unit according to claim 13 , wherein the memory control circuit unit further comprises a decoding circuit, the system parameter comprises a third system parameter, and the third system parameter is configured to affect a decoding mode used by the decoding circuit.