Adhesive film transfer coating and use in the manufacture of light emitting devices
A converter layer bonding device, and methods of making and using the converter layer bonding device are disclosed. A converter layer bonding device as disclosed herein includes a release liner and an adhesive layer coating the release liner, the adhesive layer is solid and non-adhesive at room temperature, and is adhesive at an elevated temperature above room temperature.
1. A light emitting device comprising:
a plurality of individually addressable light emitting diodes mounted on a single chip;
a plurality of phosphor tiles having a surface with a surface roughness; and
a plurality of bond layers, each bond layer located between one of the individually addressable light emitting diodes and one of the phosphor tiles, each bond layer having a thickness, a variation in thickness of the bond layers across the single chip less than 20%, each bond layer contacting the surface of one of the phosphor tiles and conforming to the surface roughness of that surface while maintaining the variation in thickness of less than 20%.
2. The light emitting device of claim 1 , wherein the thickness of each bond layer is between 0.3 μm and 2 μm.
3. The light emitting device of claim 1 , wherein each bond layer contacts a surface of one of the light emitting diodes, the surface having a surface roughness, and each bond layer conforms to the surface roughness of the surface of the one light emitting diode while maintaining the variation in thickness of less than 20%.
4. The light emitting device of claim 1 , wherein each bond layer located between one of the individually addressable light emitting diodes and one of the phosphor tiles includes multiple channels.
5. The light emitting device of claim 4 , wherein the multiple channels have openings on an edge of the bond layer.
6. The light emitting device of claim 1 , wherein each bond layer comprises a first bond layer in contact with one of the phosphor tiles and a second bond layer in contact with one of the light emitting diodes and with the first bond layer.
7. The light emitting device of claim 6 , wherein the first bond layer has a different physical characteristic from the second bond layer.
8. The light emitting device of claim 6 , wherein the first bond layer includes multiple channels.
9. The light emitting device of claim 6 , wherein the first bond layer has a different refractive index from the second bond layer.
10. A light emitting device comprising:
a plurality of individually addressable light emitting diodes mounted on a single chip;
a plurality of phosphor tiles; and
a plurality of bond layers, each bond layer located between one of the individually addressable light emitting diodes and one of the phosphor tiles, each bond layer having a thickness of less than 2 μm and greater than 0.3 μm, a variation in thickness of the bond layers across the single chip less than 20%,
wherein each bond layer located between one of the individually addressable light emitting diodes and one of the phosphor tiles includes multiple channels.
11. The light emitting device of claim 10 , wherein the variation in thickness is less than 10%.
12. The light emitting device of claim 10 , wherein the multiple channels have openings on an edge of the bond layer.
13. A light emitting device comprising:
a plurality of individually addressable light emitting diodes mounted on a single chip;
a plurality of phosphor tiles; and
a plurality of bond layers, each bond layer located between one of the individually addressable light emitting diodes and one of the phosphor tiles, each bond layer having a thickness, a variation in thickness of the bond layers across the single chip less than 20%, each bond layer between each of the individually addressable light emitting diodes and phosphor tiles includes multiple channels.
14. The light emitting device of claim 13 , wherein the multiple channels have openings on an edge of the bond layer.
15. The light emitting device of claim 13 , wherein the thickness of each bond layer is less than 2 μm and greater than 0.3 μm.
16. The light emitting device of claim 13 , wherein each bond layer contacts a surface of one of the phosphor tiles, the surface having a surface roughness, and each bond layer conforms to the surface roughness of the surface of the one light emitting diode while maintaining the variation in thickness of less than 20%.
17. The light emitting device of claim 13 ,
wherein each bond layer comprises a first bond layer in contact with one of the phosphor tiles and a second bond layer in contact with one of the light emitting diodes and with the first bond layer; and
wherein the first bond layer contains the multiple channels.
18. The light emitting device of claim 17 , wherein the first bond layer has a different physical characteristic from the second bond layer.
19. The light emitting device of claim 17 , wherein the first bond layer has a different refractive index from the second bond layer.