IP Library › Granted Patent US 12,375,056
Granted Patent B2
US 12,375,056 · App. 18/656,141 · Granted Jul 29, 2025

Transversely-excited film bulk acoustic resonators

Inventors: Viktor Plesski (Gorgier, CH); Bryant Garcia (Mississauga, CA); Julius Koskela (Helsinki, FI); Patrick Turner (Portola Valley, CA)
Assignee: MURATA MANUFACTURING CO., LTD.
H03H9/02338H03H3/04H03H9/02228H03H9/02559H03H9/132H03H9/547
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Quick Facts
Patent No.
US 12,375,056
App. No.
18/656,141
Granted
Jul 29, 2025
Kind
B2
Abstract

There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a single-crystal piezoelectric plate having front and back surfaces, a portion of the piezoelectric plate forming a diaphragm. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.

Claims (38)

1. An acoustic resonator comprising:

a piezoelectric layer having a thickness ts;

an interdigital transducer (IDT) having interleaved fingers on the piezoelectric layer; and

a dielectric layer having a thickness tfd and that is disposed on the piezoelectric layer and at least between the interleaved fingers of the IDT,

wherein a total thickness defined by the thickness ts and the thickness tfd is between 300 nm and 500 nm, and

wherein the piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer, the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to a surface of the piezoelectric layer and that is transverse to a direction of an electric field created by the interleaved fingers of the IDT.

2. The acoustic resonator of claim 1 , wherein the thickness tfd of the dielectric layer is greater than 0 nm and equal to or less than 90 nm.

3. The acoustic resonator of claim 1 , wherein the thickness ts of the piezoelectric layer is greater than 300 nm and less than 500 nm.

4. The acoustic resonator of claim 1 , wherein the thickness tfd of the dielectric layer is approximately 100 nm.

5. The acoustic resonator of claim 4 , wherein the thickness tfd of the dielectric layer is less than the thickness ts of the piezoelectric layer.

6. The acoustic resonator of claim 1 , wherein the thickness tfd of the dielectric layer is less than the thickness ts of the piezoelectric layer.

7. The acoustic resonator of claim 1 , wherein the thickness ts is measured in a direction orthogonal to a surface of the piezoelectric layer, and the thickness tfd is measured in a direction orthogonal to a surface of the dielectric layer.

8. The acoustic resonator of claim 1 , wherein the dielectric layer comprises a first dielectric layer between the fingers of the IDT and a second dielectric layer over the first dielectric layer.

9. The acoustic resonator of claim 8 , wherein a material of the first dielectric layer is different from a material of the second dielectric layer.

10. The acoustic resonator of claim 1 , wherein a thickness of the interleaved fingers of the IDT is greater than or equal to 0.25 times the thickness ts of the piezoelectric layer and less than or equal to 2.5 times the thickness ts of the piezoelectric layer.

11. The acoustic resonator of claim 1 , wherein a pitch of the interleaved fingers of the IDT is greater than or equal to 6 times the thickness ts of the piezoelectric layer and less than or equal to 12.5 times the thickness ts of the piezoelectric layer.

12. An acoustic resonator comprising:

a piezoelectric layer having a thickness ts;

an interdigital transducer (IDT) having interleaved fingers on the piezoelectric layer; and

a dielectric layer having a thickness tfd and that is disposed on the piezoelectric layer and at least between the interleaved fingers of the IDT,

wherein a total thickness defined by the thickness ts and the thickness tfd is between 200 nm and 500 nm, and

wherein the piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer, the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to a surface of the piezoelectric layer and that is transverse to a direction of an electric field created by the interleaved fingers of the IDT.

13. The acoustic resonator of claim 12 , wherein the thickness tfd of the dielectric layer is greater than 0 nm and equal to or less 90 nm, and the thickness ts of the piezoelectric layer is greater than the thickness tfd of the dielectric layer.

14. The acoustic resonator of claim 12 , wherein the thickness tfd of the dielectric layer is approximately 100 nm, and the thickness ts of the piezoelectric layer is greater than the thickness tfd of the dielectric layer.

15. The acoustic resonator of claim 12 , wherein the thickness ts is measured in a direction orthogonal to a surface of the piezoelectric layer, and the thickness tfd is measured in a direction orthogonal to a surface of the dielectric layer.

16. The acoustic resonator of claim 12 , wherein:

a thickness of the interleaved fingers of the IDT is greater than or equal to 0.25 times the thickness ts of the piezoelectric layer and less than or equal to 2.5 times the thickness ts of the piezoelectric layer, and

a pitch of the interleaved fingers of the IDT is greater than or equal to 6 times the thickness ts of the piezoelectric layer and less than or equal to 12.5 times the thickness ts of the piezoelectric layer.

17. A filter device comprising:

a plurality of bulk wave resonators that each comprise:

a piezoelectric layer having a thickness ts;

an interdigital transducer (IDT) having interleaved fingers on the piezoelectric layer; and

a dielectric layer having a thickness tfd and that is disposed on the piezoelectric layer and at least between the interleaved fingers of the IDT,

wherein a total thickness for at least one of the plurality of bulk wave resonators is defined by the thickness ts and the thickness tfd and is between 300 nm and 500 nm, and

wherein, for each of the plurality of bulk wave resonators, the piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the respective piezoelectric layer, the primary shear acoustic mode being a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to a surface of the piezoelectric layer and that is transverse to a direction of an electric field created by the interleaved fingers of the IDT.

18. The filter device of claim 17 , wherein, for the at least one bulk wave resonator, the thickness tfd of the dielectric layer is greater than 0 nm and equal to or less 90 nm, and the thickness ts of the piezoelectric layer is greater than the thickness tfd of the dielectric layer.

19. The filter device of claim 17 , wherein, for the at least one bulk wave resonator, the thickness tfd of the dielectric layer is approximately 100 nm, and the thickness ts of the piezoelectric layer is greater than the thickness tfd of the dielectric layer.

20. The filter device of claim 17 , wherein the thickness ts is measured in a direction orthogonal to a surface of the piezoelectric layer of the at least one bulk wave resonator, and the thickness tfd is measured in a direction orthogonal to a surface of the dielectric layer of the at least one bulk wave resonator.