Image sensor, camera device including the image sensor, electronic device including the camera device, and method of manufacturing the image sensor
Provided is an image sensor including a light sensing element in a substrate, a plurality of transfer gates (TGs) spaced apart from each other in a horizontal direction substantially parallel to a surface of the substrate, each of the plurality of TGs extending through a portion of the substrate and contacting the light sensing element, and a floating diffusion (FD) region on a portion of the substrate adjacent to the plurality of TGs, wherein the FD region is between the plurality of TGs in a plan view.
1 . An image sensor comprising:
a light sensing element in a substrate;
a plurality of transfer gates (TGs) spaced apart from each other in a horizontal direction substantially parallel to a surface of the substrate, each of the plurality of TGs extending through a portion of the substrate and contacting the light sensing element;
a floating diffusion (FD) region at a portion of the substrate adjacent to the plurality of TGs;
a first division pattern extending at least partially through the substrate in a vertical direction substantially perpendicular to the surface of the substrate, the first division pattern having a first closed shape in a plan view;
a second division pattern connected to the first division pattern and extending from the first closed shape toward an outside of the first closed shape in a horizontal direction to form a second closed shape adjacent to the first closed shape in the plan view; and
a third division pattern connected to the first division pattern and extending from the first closed shape toward a center of the first closed shape,
wherein the FD region is between the plurality of TGs in a plan view.
2 . The image sensor of claim 1 , wherein the light sensing element is one of a plurality of light sensing elements spaced apart from each other in the horizontal direction, and
wherein the plurality of TGs contact the plurality of light sensing elements, respectively.
3 . The image sensor of claim 1 ,
wherein the light sensing element, the plurality of TGs and the FD region are in each of a unit pixel regions.
4 . The image sensor of claim 1 , wherein the third division pattern is one of four third division patterns spaced apart from each other in the horizontal direction, and
wherein the light sensing element is in each region corresponding to the first division pattern and corresponding two of the four third division patterns.
5 . The image sensor of claim 4 , wherein the plurality of TGs and the FD region are at a central region of the first closed shape.
6 . The image sensor of claim 3 , wherein the first division pattern extends through the substrate in the vertical direction, the first division pattern including:
a core extending in the vertical direction; and
a shell covering a sidewall of the core in the horizontal direction.
7 . The image sensor of claim 6 , wherein the core includes polysilicon, and the shell includes silicon oxide.
8 . The image sensor of claim 6 , wherein the light sensing element is a first impurity region in which first conductivity type impurities are doped, and
wherein the image sensor further comprises a second impurity region in which second conductivity type impurities are doped, the second conductivity type being different from the first conductivity type.
9 . The image sensor of claim 3 , wherein the first division pattern extends partially through the substrate in the vertical direction.
10 . The image sensor of claim 9 , wherein the first division pattern includes a metal oxide.
11 . The image sensor of claim 3 ,
wherein at least one additional light sensing element, at least one additional TG and at least one additional FD region are in a region corresponding to an inside of the second closed shape in a plan view.
12 . The image sensor of claim 11 , wherein an area of the second closed shape is less than an area of the first closed shape.
13 . The image sensor of claim 11 , wherein a reset transistor, a source follower transistor and a select transistor are in a region corresponding to an inside of the first closed shape in a plan view.
14 . The image sensor of claim 12 , wherein one additional light sensing element, one additional TG and one additional FD region are in the region corresponding to the inside of the second closed shape in a plan view.
15 . The image sensor of claim 1 , further comprising a color filter and a microlens stacked in a vertical direction, the color filter and the microlens overlapping the light sensing element in the vertical direction.
16 . An image sensor comprising:
a light sensing element in a substrate;
a transfer gate (TG) extending through a portion of the substrate and contacting the light sensing element, the TG having a ring shape in a plan view;
a floating diffusion (FD) region at a portion of the substrate adjacent to the TG;
a first division pattern extending at least partially through the substrate in a vertical direction substantially perpendicular to the surface of the substrate, the first division pattern having a first closed shape in a plan view;
a second division pattern connected to the first division pattern and extending from the first closed shape toward an outside of the first closed shape in a horizontal direction to form a second closed shape adjacent to the first closed shape in the plan view; and
a third division pattern connected to the first division pattern and extending from the first closed shape toward a center of the first closed shape,
wherein the FD region is at an inside of the TG in a plan view.
17 . The image sensor of claim 16 , wherein the light sensing element is one of a plurality of light sensing elements spaced apart from each other in a horizontal direction substantially parallel to a surface of the substrate, and
wherein the TG contacts the plurality of light sensing elements.
18 . An image sensor comprising:
a plurality of light sensing elements in a substrate, the plurality of light sensing elements being spaced apart from each other in a horizontal direction substantially parallel to a surface of the substrate;
one or a plurality of transfer gates (TGs) spaced apart from each other, the one or each one of the plurality of TGs extending through a portion of the substrate and directly contacting the plurality of light sensing elements commonly or respectively; and
a floating diffusion (FD) region at a portion of the substrate adjacent to the one or the plurality of TGs;
a first division pattern extending at least partially through the substrate in a vertical direction substantially perpendicular to the surface of the substrate, the first division pattern having a first closed shape in a plan view;
a second division pattern connected to the first division pattern and extending from the first closed shape toward an outside of the first closed shape in a horizontal direction to form a second closed shape adjacent to the first closed shape in the plan view; and
a third division pattern connected to the first division pattern and extending from the first closed shape toward a center of the first closed shape,
wherein a cross-section of the FD region in a vertical direction substantially perpendicular to the surface of the substrate is at an inside of the one TG or between the plurality of TGs.
19 . The image sensor of claim 18 ,
wherein the plurality of light sensing elements, the one or the plurality of TGs, and the FD region are in each of a unit pixel regions.