Granted Patent
Utility
US 4,220,116 · App. 05/955,653
Reactant gas flow structure for a low pressure chemical vapor deposition system
Inventor:
Arthur Kenneth Hochberg
Patented Case
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Granted: Sep 2, 1980
Filed: Oct 30, 1978
Inventor
Arthur Kenneth Hochberg
Assignee (at issue)
Burroughs, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.