IP Library › Granted Patent US 4,241,359
Granted Patent Utility
US 4,241,359 · App. 05/882,738

Semiconductor device having buried insulating layer

Inventors: Katsutoshi Izumi, Masanobu Doken, Hisashi Ariyoshi
Patented Case View Patent ↗
Granted: Dec 23, 1980 Filed: Mar 2, 1978
Inventors
Katsutoshi Izumi
Masanobu Doken
Hisashi Ariyoshi
Assignee (at issue)
Nippon Telegraph and Telephone Public Corporation

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Quick Facts
Patent No.
US 4,241,359
App. No.
05/882,738
Filed
1978-03-02
Granted
1980-12-23
Kind
A