Granted Patent
Utility
US 4,272,302 · App. 06/072,727
Method of making V-MOS field effect transistors utilizing a two-step anisotropic etching and ion implantation
Inventor:
Murzban D. Jhabvala
Patented Case
View Patent ↗
Granted: Jun 9, 1981
Filed: Sep 5, 1979
Inventor
Murzban D. Jhabvala
Assignee (at issue)
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.