Granted Patent
Utility
US 4,282,647 · App. 06/079,163
Method of fabricating high density refractory metal gate MOS integrated circuits utilizing the gate as a selective diffusion and oxidation mask
Inventor:
Paul L. Richman
Patented Case
View Patent ↗
Granted: Aug 11, 1981
Filed: Sep 26, 1979
Inventor
Paul L. Richman
Assignee (at issue)
STANDARD MICROSYSTEMS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.