Granted Patent
Utility
US 4,313,809 · App. 06/197,286
Method of reducing edge current leakage in N channel silicon-on-sapphire devices
Inventors:
Carl W. Benyon, Jr., John J. O'Neill
Patented Case
View Patent ↗
Granted: Feb 2, 1982
Filed: Oct 15, 1980
Inventors
Carl W. Benyon, Jr.
John J. O'Neill
Assignee (at issue)
RCA Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.