Granted Patent
Utility
US 4,327,475 · App. 06/161,781
Method of manufacturing a FET device disposed in a compound s/c layer on a semi-insulating substrate
Inventors:
Kazuyoshi Asai, Yasunobu Ishii, Katsuhiko Kurumada
Patented Case
View Patent ↗
Granted: May 4, 1982
Filed: Jun 23, 1980
Inventors
Kazuyoshi Asai
Yasunobu Ishii
Katsuhiko Kurumada
Assignee (at issue)
Nippon Telegraph and Telephone Public Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.