Granted Patent
Utility
US 4,339,869 · App. 06/187,043
Method of making low resistance contacts in semiconductor devices by ion induced silicides
Inventors:
Robert F. Reihl, Kang L. Wang
Patented Case
View Patent ↗
Granted: Jul 20, 1982
Filed: Sep 15, 1980
Inventors
Robert F. Reihl
Kang L. Wang
Assignee (at issue)
General Electric Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.