Granted Patent
Utility
US 4,362,597 · App. 06/226,104
Method of fabricating high-conductivity silicide-on-polysilicon structures for MOS devices
Inventors:
David B. Fraser, Eliezer Kinsbron, Frederick Vratny
Patented Case
View Patent ↗
Granted: Dec 7, 1982
Filed: Jan 19, 1981
Inventors
David B. Fraser
Eliezer Kinsbron
Frederick Vratny
Assignee (at issue)
Bell Telephone Laboratories, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.