Granted Patent
Utility
US 4,389,255 · App. 06/206,350
Method of forming buried collector for bipolar transistor in a semiconductor by selective implantation of poly-si followed by oxidation and etch-off
Inventors:
Chau-Shiong Chen, Anant O. Dixit
Patented Case
View Patent ↗
Granted: Jun 21, 1983
Filed: Nov 13, 1980
Inventors
Chau-Shiong Chen
Anant O. Dixit
Assignee (at issue)
Burroughs, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.