IP Library Granted Patent US 4,391,650
Granted Patent Utility
US 4,391,650 · App. 06/218,891

Method for fabricating improved complementary metal oxide semiconductor devices

Inventors: Robert F. Pfeifer, Murray L. Trudel
Patented Case View Patent ↗
Granted: Jul 5, 1983 Filed: Dec 22, 1980
Inventors
Robert F. Pfeifer
Murray L. Trudel
Assignee (at issue)
NCR Corporation

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Quick Facts
Patent No.
US 4,391,650
App. No.
06/218,891
Filed
1980-12-22
Granted
1983-07-05
Kind
A