Granted Patent
Utility
US 4,393,572 · App. 06/154,601
Method of making low leakage N-channel SOS transistors utilizing positive photoresist masking techniques
Inventors:
Steven Policastro, Dae-Shik Woo
Patented Case
View Patent ↗
Granted: Jul 19, 1983
Filed: May 29, 1980
Inventors
Steven Policastro
Dae-Shik Woo
Assignee (at issue)
RCA Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.