Granted Patent
Utility
US 4,397,076 · App. 06/301,557
Method for making low leakage polycrystalline silicon-to-substrate contacts
Inventors:
Edward H. Honnigford, Vinod K. Dham
Patented Case
View Patent ↗
Granted: Aug 9, 1983
Filed: Sep 14, 1981
Inventors
Edward H. Honnigford
Vinod K. Dham
Assignee (at issue)
NCR Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.