IP Library Granted Patent US 4,400,409
Granted Patent Utility
US 4,400,409 · App. 06/151,301

Method of making p-doped silicon films

Inventors: Masatsugu Izu, Vincent D. Cannella, Stanford R. Ovshinsky
Patented Case View Patent ↗
Granted: Aug 23, 1983 Filed: May 19, 1980
Inventors
Masatsugu Izu
Vincent D. Cannella
Stanford R. Ovshinsky
Assignee (at issue)
Energy Conversion Devices, Inc.

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Quick Facts
Patent No.
US 4,400,409
App. No.
06/151,301
Filed
1980-05-19
Granted
1983-08-23
Kind
A