IP Library Granted Patent US 4,411,708
Granted Patent Utility
US 4,411,708 · App. 06/180,914

Method of making precision doped polysilicon vertical ballast resistors by multiple implantations

Inventor: Lucien C. Winhan
Patented Case View Patent ↗
Granted: Oct 25, 1983 Filed: Aug 25, 1980
Inventor
Lucien C. Winhan
Assignee (at issue)
TRW Limited

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Quick Facts
Patent No.
US 4,411,708
App. No.
06/180,914
Filed
1980-08-25
Granted
1983-10-25
Kind
A