IP Library › Granted Patent US 4,422,885
Granted Patent Utility
US 4,422,885 · App. 06/332,037

Polysilicon-doped-first CMOS process

Inventors: Ronald W. Brower, Samuel Y. Chiao, Robert F. Pfeifer, Roberto Romano-Moran
Patented Case View Patent ↗
Granted: Dec 27, 1983 Filed: Dec 18, 1981
Inventors
Ronald W. Brower
Samuel Y. Chiao
Robert F. Pfeifer
Roberto Romano-Moran
Assignee (at issue)
NCR Corporation

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Quick Facts
Patent No.
US 4,422,885
App. No.
06/332,037
Filed
1981-12-18
Granted
1983-12-27
Kind
A