IP Library Granted Patent US 4,426,704
Granted Patent Utility
US 4,426,704 · App. 06/317,592

Semiconductor laser with two active layers

Inventors: Haruo Nagai, Yoshio Noguchi, Kenichiro Takahei
Patented Case View Patent ↗
Granted: Jan 17, 1984 Filed: Nov 2, 1981
Inventors
Haruo Nagai
Yoshio Noguchi
Kenichiro Takahei
Assignee (at issue)
Nippon Telegraph and Telephone Public Corporation

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Quick Facts
Patent No.
US 4,426,704
App. No.
06/317,592
Filed
1981-11-02
Granted
1984-01-17
Kind
A