Granted Patent
Utility
US 4,435,899 · App. 06/450,310
Method of producing lateral transistor separated from substrate by intersecting slots filled with substrate oxide
Inventor:
Sidney I. Soclof
Patented Case
View Patent ↗
Granted: Mar 13, 1984
Filed: Dec 16, 1982
Inventor
Sidney I. Soclof
Assignee (at issue)
Rockwell International Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.