Granted Patent
Utility
US 4,448,800 · App. 06/403,531
Method for the manufacture of semiconductor device using refractory metal in a lift-off step
Inventors:
Kohei Ehara, Susumu Muramoto, Takashi Morimoto, Seitaro Matsuo, Manabu Itsumi
Patented Case
View Patent ↗
Granted: May 15, 1984
Filed: Jul 30, 1982
Inventors
Kohei Ehara
Susumu Muramoto
Takashi Morimoto
Seitaro Matsuo
Manabu Itsumi
Assignee (at issue)
Nippon Telegraph and Telephone Public Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.