IP Library Granted Patent US 4,456,879
Granted Patent Utility
US 4,456,879 · App. 06/298,581

Method and apparatus for determining the doping profile in epitaxial layers of semiconductors

Inventor: Hans P. Kleinknecht
Patented Case View Patent ↗
Granted: Jun 26, 1984 Filed: Sep 2, 1981
Inventor
Hans P. Kleinknecht
Assignee (at issue)
RCA Corporation

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Quick Facts
Patent No.
US 4,456,879
App. No.
06/298,581
Filed
1981-09-02
Granted
1984-06-26
Kind
A