Granted Patent
Utility
US 4,460,416 · App. 06/450,115
Method for fabricating in-situ doped polysilicon employing overdamped gradually increasing gas flow rates with constant flow rate ratio
Inventor:
Casimir J. Wonsowicz
Patented Case
View Patent ↗
Granted: Jul 17, 1984
Filed: Dec 15, 1982
Inventor
Casimir J. Wonsowicz
Assignee (at issue)
Burroughs, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.