Granted Patent
Utility
US 4,466,178 · App. 06/277,380
Method of making extremely small area PNP lateral transistor by angled implant of deep trenches followed by refilling the same with dielectrics
Inventor:
Sidney I. Soclof
Patented Case
View Patent ↗
Granted: Aug 21, 1984
Filed: Jun 25, 1981
Inventor
Sidney I. Soclof
Assignee (at issue)
Rockwell International Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.