IP Library Granted Patent US 4,466,178
Granted Patent Utility
US 4,466,178 · App. 06/277,380

Method of making extremely small area PNP lateral transistor by angled implant of deep trenches followed by refilling the same with dielectrics

Inventor: Sidney I. Soclof
Patented Case View Patent ↗
Granted: Aug 21, 1984 Filed: Jun 25, 1981
Inventor
Sidney I. Soclof
Assignee (at issue)
Rockwell International Corporation

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Quick Facts
Patent No.
US 4,466,178
App. No.
06/277,380
Filed
1981-06-25
Granted
1984-08-21
Kind
A