Granted Patent
Utility
US 4,469,715 · App. 06/505,824
P-type semiconductor material having a wide band gap
Inventor:
Arun Madan
Patented Case
View Patent ↗
Granted: Sep 4, 1984
Filed: Jun 20, 1983
Inventor
Arun Madan
Assignee (at issue)
Energy Conversion Devices, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.