Granted Patent
Utility
US 4,470,852 · App. 06/414,737
Method of making CMOS device and contacts therein by enhanced oxidation of selectively implanted regions
Inventor:
Daniel L. Ellsworth
Patented Case
View Patent ↗
Granted: Sep 11, 1984
Filed: Sep 3, 1982
Inventor
Daniel L. Ellsworth
Assignee (at issue)
NCR Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.