Granted Patent
Utility
US 4,472,873 · App. 06/313,875
Method for forming submicron bipolar transistors without epitaxial growth and the resulting structure
Inventor:
Wen C. Ko
Patented Case
View Patent ↗
Granted: Sep 25, 1984
Filed: Oct 22, 1981
Inventor
Wen C. Ko
Assignee (at issue)
Fairchild Camera & Instrument Corp.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.