Granted Patent
Utility
US 4,473,939 · App. 06/453,251
Process for fabricating GaAs FET with ion implanted channel layer
Inventors:
Milton Feng, Victor K. Eu, Hilda Kanber
Patented Case
View Patent ↗
Granted: Oct 2, 1984
Filed: Dec 27, 1982
Inventors
Milton Feng
Victor K. Eu
Hilda Kanber
Assignee (at issue)
Hughes Aircraft Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.