IP Library Granted Patent US 4,479,455
Granted Patent Utility
US 4,479,455 · App. 06/475,289

Process gas introduction and channeling system to produce a profiled semiconductor layer

Inventors: Joachim Doehler, Kevin Hoffman, Timothy D. Laarman, Gary M. DiDio, Therese McDonough
Patented Case View Patent ↗
Granted: Oct 30, 1984 Filed: Mar 14, 1983
Inventors
Joachim Doehler
Kevin Hoffman
Timothy D. Laarman
Gary M. DiDio
Therese McDonough
Assignee (at issue)
Energy Conversion Devices, Inc.

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Quick Facts
Patent No.
US 4,479,455
App. No.
06/475,289
Filed
1983-03-14
Granted
1984-10-30
Kind
A