Granted Patent
Utility
US 4,490,900 · App. 06/343,845
Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein
Inventor:
Te-Long Chiu
Patented Case
View Patent ↗
Granted: Jan 1, 1985
Filed: Jan 29, 1982
Inventor
Te-Long Chiu
Assignee (at issue)
Seeq Technology, Incorporated
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.