IP Library Granted Patent US 4,501,625
Granted Patent Utility
US 4,501,625 · App. 06/564,953

Method of producing homogeneously doped HgCdTe which contains a fast diffusing dopant impurity

Inventors: John H. Tregilgas, Jeffrey D. Beck, Michael A. Kinch, Herbert F. Schaake
Patented Case View Patent ↗
Granted: Feb 26, 1985 Filed: Dec 23, 1983
Inventors
John H. Tregilgas
Jeffrey D. Beck
Michael A. Kinch
Herbert F. Schaake
Assignee (at issue)
Texas Instruments Incorporated

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Quick Facts
Patent No.
US 4,501,625
App. No.
06/564,953
Filed
1983-12-23
Granted
1985-02-26
Kind
A