Granted Patent
Utility
US 4,502,206 · App. 06/553,255
Method of forming semiconductor contacts by implanting ions of neutral species at the interfacial region
Inventors:
George L. Schnable, Chung P. Wu
Patented Case
View Patent ↗
Granted: Mar 5, 1985
Filed: Nov 18, 1983
Inventors
George L. Schnable
Chung P. Wu
Assignee (at issue)
RCA Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.