IP Library Granted Patent US 4,521,272
Granted Patent Utility
US 4,521,272 · App. 06/449,311

Method for forming and growing a single crystal of a semiconductor compound

Inventor: William Andrew Gault
Patented Case View Patent ↗
Granted: Jun 4, 1985 Filed: Dec 13, 1982
Inventor
William Andrew Gault
Assignee (at issue)
AT&T Technologies Incorporated

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Quick Facts
Patent No.
US 4,521,272
App. No.
06/449,311
Filed
1982-12-13
Granted
1985-06-04
Kind
A