Granted Patent
Utility
US 4,528,061 · App. 06/485,355
Process for manufacturing boron-doped gallium arsenide single crystal
Inventors:
Shintaro Miyazawa, Yasushi Nanishi, Kohji Tada, Akihisa Kawasaki, Toshihiro Kotani
Patented Case
View Patent ↗
Granted: Jul 9, 1985
Filed: Apr 15, 1983
Inventors
Shintaro Miyazawa
Yasushi Nanishi
Kohji Tada
Akihisa Kawasaki
Toshihiro Kotani
Assignees (at issue)
Nippon Telegraph and Telephone Public Corporation
SUMITOMO ELECTRIC INDUSTRIES, LTD.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.