Granted Patent
Utility
US 4,546,539 · App. 06/447,946
I.sup.2 L Structure and fabrication process compatible with high voltage bipolar transistors
Inventor:
James D. Beasom
Patented Case
View Patent ↗
Granted: Oct 15, 1985
Filed: Dec 8, 1982
Inventor
James D. Beasom
Assignee (at issue)
HARRIS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.