Granted Patent
Utility
US 4,558,338 · App. 06/523,656
Insulated gate type field effect transistor having a silicon gate electrode
Inventor:
Masanori Sakata
Patented Case
View Patent ↗
Granted: Dec 10, 1985
Filed: Aug 15, 1983
Inventor
Masanori Sakata
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.