Granted Patent
Utility
US 4,559,696 · App. 06/629,576
Ion implantation to increase emitter energy gap in bipolar transistors
Inventors:
Kranti V. Anand, Robert J. Strain
Patented Case
View Patent ↗
Granted: Dec 24, 1985
Filed: Jul 11, 1984
Inventors
Kranti V. Anand
Robert J. Strain
Assignee (at issue)
Fairchild Camera & Instrument Corp.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.