IP Library Granted Patent US 4,576,829
Granted Patent Utility
US 4,576,829 · App. 06/687,366

Low temperature growth of silicon dioxide on silicon

Inventors: Grzegorz Kaganowicz, John W. Robinson, John Thomas
Patented Case View Patent ↗
Granted: Mar 18, 1986 Filed: Dec 28, 1984
Inventors
Grzegorz Kaganowicz
John W. Robinson
John Thomas
Assignee (at issue)
RCA Corporation

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Quick Facts
Patent No.
US 4,576,829
App. No.
06/687,366
Filed
1984-12-28
Granted
1986-03-18
Kind
A