Granted Patent
Utility
US 4,584,760 · App. 06/624,733
Method of manufacturing a semiconductor device having a polycrystalline silicon layer
Inventor:
Takeshi Okazawa
Patented Case
View Patent ↗
Granted: Apr 29, 1986
Filed: Jun 26, 1984
Inventor
Takeshi Okazawa
Assignee (at issue)
NEC CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.