Granted Patent
Utility
US 4,596,068 · App. 06/566,400
Process for minimizing boron depletion in N-channel FET at the silicon-silicon oxide interface
Inventor:
Solomon F. Peters, Jr.
Patented Case
View Patent ↗
Granted: Jun 24, 1986
Filed: Dec 28, 1983
Inventor
Solomon F. Peters, Jr.
Assignee (at issue)
HARRIS CORPORATION
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.