Granted Patent
Utility
US 4,617,066 · App. 06/674,623
Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing
Inventor:
Prahalad K. Vasudev
Patented Case
View Patent ↗
Granted: Oct 14, 1986
Filed: Nov 26, 1984
Inventor
Prahalad K. Vasudev
Assignee (at issue)
Hughes Aircraft Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.