Granted Patent
Utility
US 4,618,510 · App. 06/634,250
Pre-passivated sub-micrometer gate electrodes for MESFET devices
Inventor:
Tun Tan
Patented Case
View Patent ↗
Granted: Oct 21, 1986
Filed: Sep 5, 1984
Inventor
Tun Tan
Assignee (at issue)
Hewlett-Packard Company, L.P.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.