IP Library Granted Patent US 4,633,282
Granted Patent Utility
US 4,633,282 · App. 06/432,463

Metal-semiconductor field-effect transistor with a partial p-type drain

Inventor: Chien-Ping Lee
Patented Case View Patent ↗
Granted: Dec 30, 1986 Filed: Oct 4, 1982
Inventor
Chien-Ping Lee
Assignee (at issue)
Rockwell International Corporation

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Quick Facts
Patent No.
US 4,633,282
App. No.
06/432,463
Filed
1982-10-04
Granted
1986-12-30
Kind
A