IP Library › Granted Patent US 4,636,825
Granted Patent Utility
US 4,636,825 · App. 06/784,810

Distributed field effect transistor structure

Inventor: Martin J. Baynes
Patented Case View Patent ↗
Granted: Jan 13, 1987 Filed: Oct 4, 1985
Inventor
Martin J. Baynes
Assignee (at issue)
FAIRCHILD SEMICONDUCTOR CORPORATION

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Quick Facts
Patent No.
US 4,636,825
App. No.
06/784,810
Filed
1985-10-04
Granted
1987-01-13
Kind
A