Granted Patent
Utility
US 4,644,637 · App. 06/567,116
Method of making an insulated-gate semiconductor device with improved shorting region
Inventor:
Victor A. K. Temple
Patented Case
View Patent ↗
Granted: Feb 24, 1987
Filed: Dec 30, 1983
Inventor
Victor A. K. Temple
Assignee (at issue)
General Electric Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.