Granted Patent
Utility
US 4,648,174 · App. 06/698,495
Method of making high breakdown voltage semiconductor device
Inventors:
Victor A. K. Temple, Wirojana Tantraporn
Patented Case
View Patent ↗
Granted: Mar 10, 1987
Filed: Feb 5, 1985
Inventors
Victor A. K. Temple
Wirojana Tantraporn
Assignee (at issue)
General Electric Company
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.