IP Library Granted Patent US 4,648,917
Granted Patent Utility
US 4,648,917 · App. 06/769,909

Non isothermal method for epitaxially growing HgCdTe

Inventors: Robert Ellis Kay, Hakchill Chan, Fred Ju, Burton A. Bray
Patented Case View Patent ↗
Granted: Mar 10, 1987 Filed: Aug 26, 1985
Inventors
Robert Ellis Kay
Hakchill Chan
Fred Ju
Burton A. Bray
Assignee (at issue)
Ford Aerospace & Communications Corporation

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Quick Facts
Patent No.
US 4,648,917
App. No.
06/769,909
Filed
1985-08-26
Granted
1987-03-10
Kind
A