Granted Patent
Utility
US 4,659,400 · App. 06/750,488
Method for forming high yield epitaxial wafers
Inventors:
Danny Garbis, Joseph J. Chan, Amadeo J. Granata, Philip Coniglione, Thomas D. Briglia, Lawrence LaTerza
Patented Case
View Patent ↗
Granted: Apr 21, 1987
Filed: Jun 27, 1985
Inventors
Danny Garbis
Joseph J. Chan
Amadeo J. Granata
Philip Coniglione
Thomas D. Briglia
Lawrence LaTerza
Assignee (at issue)
General Instrument Corporation
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.