Granted Patent
Utility
US 4,660,208 · App. 06/621,071
Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement
Inventors:
Wilbur D. Johnston, Jr., Judith A. Long, Daniel Paul Wilt
Patented Case
View Patent ↗
Granted: Apr 21, 1987
Filed: Jun 15, 1984
Inventors
Wilbur D. Johnston, Jr.
Judith A. Long
Daniel Paul Wilt
Assignee (at issue)
American Telephone and Telegraph Company, AT&T Bell Laboratories
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.